a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982 - 1200 fax (818) 765 - 3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 10 ma 55 v bv cer i c = 10 ma r be = 10 w 55 v bv ebo i e = 1 ma 3.5 v i ces v ce = 28 v v be = 0 v 2.0 ma h fe v ce = 5.0 v i c = 500 ma 15 150 --- p g h h c v cc = 45 v p out = 15 w f = 960 - 1215 mhz 8.1 40 db % npn silicon rf power transistor AJT015 description: the asi AJT015 is designed for features: input matching network omnigold ? metalization system maximum ratings i c 1.8 a v cc 32 v p diss 50 w @ t c 100 o c t j - 65 o c to +250 o c t stg - 65 o c to +200 o c q q jc 3.0 o c/w package style .310 2l flg order code: asi10545 minimum inches / mm .100 / 2.54 .286 / 7.26 .306 / 7.77 b c d e f g a maximum .318 / 8.08 .306 / 7.77 inches / mm h dim k l i j .552 / 14.02 .300 / 7.62 .572 / 14.53 .320 / 8.13 p n m .118 / 3.00 .003 / 0.08 .131 / 3.33 .006 / 0.15 .790 / 20.07 .810 / 20.57 .072 / 1.83 .148 / 3.76 .120 / 3.05 r .052 / 1.32 .230 / 5.84 .095 / 2.41 .105 / 2.67 .050 / 1.27 .400 / 10.16 .119 / 3.02 .110 / 2.79 .130 / 3.30 i g c d f ? e n h 4x .062 x 45 r p m l j k 2 x b .040 x 45 a
|
